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100+ | CHF 2.290 |
250+ | CHF 2.160 |
500+ | CHF 1.940 |
1000+ | CHF 1.620 |
Produktspezifikationen
Produktbeschreibung
6EDL04I065PTXUMA1 is a 650V three-phase gate driver with over current protection (OCP), enable (EN), fault and integrated bootstrap diode (BSD). It is a full bridge driver to control power devices like IGBTs in 3-phase systems with a maximum blocking voltage of +650V. Based on the used SOI-technology, there is excellent ruggedness on transient voltages. No parasitic thyristor structures are present in the device. Hence, no parasitic latch-up may occur at all temperatures and voltage conditions. The device includes an under-voltage detection unit with a hysteresis characteristic and an overcurrent detection. The over-current level is adjusted by choosing the resistor value and the threshold level at pin ITRIP. Potential applications include home appliances, refrigeration compressors, air-conditioning, fans, pumps, motor drives, general-purpose inverters, power tools, and light electric vehicles.
- Qualified for industrial applications according to the relevant tests of JEDEC47/20/22
- Integrated ultra-fast, low RDS(ON) bootstrap diode
- Separate control circuits for all six drivers, detection of over current and under voltage supply
- Externally programmable delay for fault clear after over current detection
- Signal interlocking of every phase to prevent cross conduction
- 11.7V/9.8V typical UVLO thresholds
- Input bias current (ITRIP=high) is 45µA typ at VITRIP=3.3 V
- Turn-on propagation delay is 490ns typ at VLIN/HIN = 0 or 3.3V
- PG-DSO-28 package
- Ambient temperature range from -40 to 105°C
Technische Spezifikationen
6Kanäle
CMOS, LSTTL
-375mA
17.5V
105°C
490ns
28Pin(s)
165mA
13V
-40°C
490ns
No SVHC (21-Jan-2025)
Technische Dokumente (1)
Gesetzgebung und Umweltschutz
Land, in dem der letzte Fertigungsprozeß ausgeführt wurde.Herkunftsland:Indonesia
Land, in dem der letzte Fertigungsprozeß ausgeführt wurde.
RoHS
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Produkt-Konformitätszertifikat