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Menge | |
---|---|
1+ | CHF 120.570 |
5+ | CHF 105.500 |
10+ | CHF 87.410 |
Produktspezifikationen
Produktbeschreibung
CY14B116N-ZSP25XI is a CY14B116N fast SRAM, with a non-volatile element in each memory cell. The embedded non-volatile elements incorporate QuantumTrap technology, producing the world’s most reliable non-volatile memory. The SRAM can be read and written an infinite number of times. The non-volatile data residing in the non-volatile elements do not change when data is written to the SRAM. Data transfers from the SRAM to the non-volatile elements (the STORE operation) takes place automatically at power-down. On power-up, data is restored to the SRAM (the RECALL operation) from the non-volatile memory.
- 16Mbit non-volatile static random access memory (nvSRAM)
- Hands-off automatic STORE on power-down with only a small capacitor
- STORE to QuantumTrap non-volatile elements is initiated by software
- RECALL to SRAM initiated by software or power-up, high reliability
- Infinite read, write, and RECALL cycles, 1 million STORE cycles to QuantumTrap
- Sleep mode operation, low power consumption, active current of 75mA at 45ns
- Industrial temperature range from –40°C to +85°C
- 25ns speed, 54-pin TSOP II speed
- 3V voltage rating, ×16 data bus
Technische Spezifikationen
16Mbit
1M x 16 Bit
25ns
2.7V
TSOP-II
54Pin(s)
Parallel
85°C
No SVHC (21-Jan-2025)
16Mbit
1M x 16 Bit
25ns
3.6V
TSOP-II
Parallel
-40°C
-
Technische Dokumente (1)
Gesetzgebung und Umweltschutz
Land, in dem der letzte Fertigungsprozeß ausgeführt wurde.Herkunftsland:Philippines
Land, in dem der letzte Fertigungsprozeß ausgeführt wurde.
RoHS
RoHS
Produkt-Konformitätszertifikat