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SI7898DP-T1-GE3
Power MOSFET, N Channel, 150 V, 3 A, 0.068 ohm, SOIC, Surface Mount
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Available to Order
Manufacturer Standard Lead Time: 17 week(s)
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| Quantity | Price (ex VAT) |
|---|---|
| 3000+ | CHF 0.854 |
| 9000+ | CHF 0.812 |
Price for:Each (Supplied on Full Reel)
Minimum: 3000
Multiple: 3000
CHF 2,562.00 (ex VAT)
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI7898DP-T1-GE3
Order Code4384455
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds150V
Continuous Drain Current Id3A
Drain Source On State Resistance0.068ohm
Transistor Case StyleSOIC
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2V
Power Dissipation1.9W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCTo Be Advised
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
3A
Transistor Case Style
SOIC
Rds(on) Test Voltage
10V
Power Dissipation
1.9W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
150V
Drain Source On State Resistance
0.068ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2V
No. of Pins
8Pins
Product Range
-
SVHC
To Be Advised
Technical Docs (1)
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000145
Product traceability