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SI4463CDY-T1-GE3
Power MOSFET, P Channel, 20 V, 18.6 A, 0.006 ohm, SOIC, Surface Mount
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Available to Order
Manufacturer Standard Lead Time: 19 week(s)
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| Quantity | Price (ex VAT) |
|---|---|
| 2500+ | CHF 0.337 |
| 7500+ | CHF 0.327 |
Price for:Each (Supplied on Full Reel)
Minimum: 2500
Multiple: 2500
CHF 842.50 (ex VAT)
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI4463CDY-T1-GE3
Order Code4320186
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id18.6A
Drain Source On State Resistance0.006ohm
Transistor Case StyleSOIC
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max600mV
Power Dissipation5W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (14-Jun-2023)
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
18.6A
Transistor Case Style
SOIC
Rds(on) Test Voltage
10V
Power Dissipation
5W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
20V
Drain Source On State Resistance
0.006ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
600mV
No. of Pins
8Pins
Product Range
-
SVHC
No SVHC (14-Jun-2023)
Technical Docs (3)
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (14-Jun-2023)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.001588
Product traceability