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SI4447ADY-T1-GE3
Power MOSFET, P Channel, 40 V, 7.2 A, 0.036 ohm, SOIC, Surface Mount
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| Quantity | Price (ex VAT) |
|---|---|
| 1+ | CHF 0.671 |
| 10+ | CHF 0.470 |
| 100+ | CHF 0.321 |
| 500+ | CHF 0.267 |
| 1000+ | CHF 0.229 |
| 5000+ | CHF 0.192 |
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI4447ADY-T1-GE3
Order Code2056685
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds40V
Continuous Drain Current Id7.2A
Drain Source On State Resistance0.036ohm
Transistor Case StyleSOIC
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.2V
Power Dissipation4.2W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (07-Nov-2024)
Product Overview
- 40V, 7.2A, P-channel TrenchFET® power MOSFET in 8 pin SOIC package
- 100% Rg tested
- 100 % UIS tested
- Suitable for load switches, adaptor switch and notebook PCs
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
7.2A
Transistor Case Style
SOIC
Rds(on) Test Voltage
10V
Power Dissipation
4.2W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (07-Nov-2024)
Drain Source Voltage Vds
40V
Drain Source On State Resistance
0.036ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.2V
No. of Pins
8Pins
Product Range
-
MSL
-
Technical Docs (3)
Associated Products
1 Product Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (07-Nov-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000138
Product traceability