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2SC3649T-TD-E
Bipolar (BJT) Single Transistor, NPN, 160 V, 1.5 A, 500 mW, SOT-89, Surface Mount
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| Quantity | Price (ex VAT) |
|---|---|
| 1+ | CHF 1.010 |
| 10+ | CHF 0.632 |
| 50+ | CHF 0.523 |
| 200+ | CHF 0.414 |
| 500+ | CHF 0.321 |
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Product Information
ManufacturerONSEMI
Manufacturer Part No2SC3649T-TD-E
Order Code2727928
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage Max160V
Continuous Collector Current1.5A
Power Dissipation500mW
Transistor Case StyleSOT-89
Transistor MountingSurface Mount
No. of Pins3Pins
Transition Frequency120MHz
DC Current Gain hFE Min200hFE
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCLead (27-Jun-2024)
Technical Specifications
Transistor Polarity
NPN
Continuous Collector Current
1.5A
Transistor Case Style
SOT-89
No. of Pins
3Pins
DC Current Gain hFE Min
200hFE
Product Range
-
MSL
MSL 1 - Unlimited
Collector Emitter Voltage Max
160V
Power Dissipation
500mW
Transistor Mounting
Surface Mount
Transition Frequency
120MHz
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (27-Jun-2024)
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412100
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0001
Product traceability