Print Page
IPD053N08N3GATMA1
Power MOSFET, N Channel, 80 V, 90 A, 0.0053 ohm, TO-252 (DPAK), Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoIPD053N08N3GATMA1
Order Code1775574
Product RangeOptiMOS 3 Series
Also Known AsIPD053N08N3 G, SP001127818
Technical Datasheet
17,364 In Stock
Need more?
1-2 Working Days Delivery
Order before 17:00 standard shipping
| Quantity | Price (ex VAT) |
|---|---|
| 1+ | CHF 1.470 |
| 10+ | CHF 1.180 |
| 100+ | CHF 0.987 |
| 500+ | CHF 0.920 |
| 1000+ | CHF 0.899 |
| 5000+ | CHF 0.876 |
Price for:Each
Minimum: 1
Multiple: 1
CHF 1.47 (ex VAT)
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerINFINEON
Manufacturer Part NoIPD053N08N3GATMA1
Order Code1775574
Product RangeOptiMOS 3 Series
Also Known AsIPD053N08N3 G, SP001127818
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds80V
Continuous Drain Current Id90A
Drain Source On State Resistance0.0053ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3.5V
Power Dissipation150W
No. of Pins3Pins
Operating Temperature Max175°C
Product RangeOptiMOS 3 Series
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (21-Jan-2025)
Product Overview
The IPD053N08N3 G is a N-channel OptiMOS™ 3 Power Transistor with superior thermal resistance, excellent gate charge x R DS(ON) product (FOM) and superior thermal resistance. Optimized technology for DC/DC converters. Ideal for high-frequency switching and synchronous rectification.
- Dual sided cooling
- Very low on resistance
- 100% Avalanche tested
- Low parasitic inductance
- Halogen-free
Applications
Power Management, Consumer Electronics, Communications & Networking, Motor Drive & Control
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
90A
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Power Dissipation
150W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Drain Source Voltage Vds
80V
Drain Source On State Resistance
0.0053ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3.5V
No. of Pins
3Pins
Product Range
OptiMOS 3 Series
MSL
MSL 1 - Unlimited
Technical Docs (1)
Alternatives for IPD053N08N3GATMA1
1 Product Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00042
Product traceability