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IGT65R025D2XTMA1
Gallium Nitride (GaN) Transistor, 650 V, 70 A, 0.03 ohm, 11 nC, HSOF, Surface Mount
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1,500 In Stock
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| Quantity | Price (ex VAT) |
|---|---|
| 10+ | CHF 11.690 |
| 50+ | CHF 10.520 |
| 100+ | CHF 9.780 |
| 250+ | CHF 9.580 |
Price for:Each (Supplied on Cut Tape)
Minimum: 10
Multiple: 1
CHF 121.90 (ex VAT)
A CHF 5.00 re-reeling charge will be added for this product
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Product Information
ManufacturerINFINEON
Manufacturer Part NoIGT65R025D2XTMA1
Order Code4640393RL
Technical Datasheet
Drain Source Voltage Vds650V
Continuous Drain Current Id70A
Drain Source On State Resistance0.03ohm
Typical Gate Charge11nC
No. of Pins8Pins
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
Drain Source Voltage Vds
650V
Drain Source On State Resistance
0.03ohm
No. of Pins
8Pins
Continuous Drain Current Id
70A
Typical Gate Charge
11nC
SVHC
No SVHC (21-Jan-2025)
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00001
Product traceability