IRFB4228PBF
Leistungs-MOSFET, n-Kanal, 150 V, 83 A, 0.012 ohm, TO-220AB, Durchsteckmontage
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| Menge | |
|---|---|
| 1+ | CHF 3.660 |
| 10+ | CHF 3.280 |
| 100+ | CHF 2.860 |
| 500+ | CHF 2.430 |
Produktspezifikationen
Alternativen für IRFB4228PBF
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Produktbeschreibung
The IRFB4228PBF is a HEXFET® single N-channel PDP switch Power MOSFET specifically designed for sustain, energy recovery and pass switch applications in plasma display panels. It utilizes the latest processing techniques to achieve low ON-resistance per silicon area and low EPULSE rating. Additional features of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. It combines to make this MOSFET a highly efficient, robust and reliable device for PDP driving applications. It is optimized for PDP sustain, energy recovery and pass switch applications.
- Advanced process technology
- Low EPULSE rating to reduce power dissipation
- Low Qg for fast response
- High repetitive peak current capability for reliable operation
- Short fall and rise times for fast switching
- Repetitive avalanche capability for robustness and reliability
Anwendungen
Unterhaltungselektronik, Power-Management
Warnungen und Hinweise
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technische Spezifikationen
n-Kanal
83A
TO-220AB
10V
330W
175°C
-
No SVHC (21-Jan-2025)
150V
0.012ohm
Durchsteckmontage
3V
3Pin(s)
-
-
Technische Dokumente (2)
Gesetzgebung und Umweltschutz
Land, in dem der letzte Fertigungsprozeß ausgeführt wurde.Herkunftsland:Philippines
Land, in dem der letzte Fertigungsprozeß ausgeführt wurde.
RoHS
RoHS
Produkt-Konformitätszertifikat