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5000+ | CHF 0.154 |
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI2319CDS-T1-GE3
Order Code1858942RL
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds40V
Continuous Drain Current Id4.4A
Drain Source On State Resistance0.064ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.2V
Power Dissipation1.25W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (07-Nov-2024)
Product Overview
The SI2319CDS-T1-GE3 is a P-channel TrenchFET® Power MOSFET with 175°C operating temperature.
- ±20V Gate-source voltage
Applications
Industrial
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
4.4A
Transistor Case Style
SOT-23
Rds(on) Test Voltage
10V
Power Dissipation
1.25W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (07-Nov-2024)
Drain Source Voltage Vds
40V
Drain Source On State Resistance
0.064ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.2V
No. of Pins
3Pins
Product Range
-
MSL
-
Technical Docs (2)
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (07-Nov-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000181