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SI2301CDS-T1-GE3
Power MOSFET, P Channel, 20 V, 3.1 A, 0.142 ohm, TO-236, Surface Mount
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432,000 In Stock
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| Quantity | Price (ex VAT) |
|---|---|
| 3000+ | CHF 0.126 |
| 9000+ | CHF 0.110 |
Price for:Each (Supplied on Full Reel)
Minimum: 3000
Multiple: 3000
CHF 378.00 (ex VAT)
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI2301CDS-T1-GE3
Order Code3879329
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id3.1A
Drain Source On State Resistance0.142ohm
Transistor Case StyleTO-236
Transistor MountingSurface Mount
Rds(on) Test Voltage2.5V
Gate Source Threshold Voltage Max400mV
Power Dissipation860mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (07-Nov-2024)
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
3.1A
Transistor Case Style
TO-236
Rds(on) Test Voltage
2.5V
Power Dissipation
860mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (07-Nov-2024)
Drain Source Voltage Vds
20V
Drain Source On State Resistance
0.142ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
400mV
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (07-Nov-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000109
Product traceability