13A Gallium Nitride (GaN) FETs | Farnell Switzerland

Find a huge range of 13A Gallium Nitride (GaN) FETs at Farnell Switzerland. We stock a wide range of Gallium Nitride (GaN) FETs, such as 29A, 31A, 38A & 13A Gallium Nitride (GaN) FETs from the worlds top manufacturers including: Infineon

Filter(s) Applied

Continuous Drain Current Id

:

13A

1 Filter(s) Selected

Compare					Price For		Quantity

	IGLR65R140D2XUMA1	4573839RL Data Sheet RoHS Date/Lot Code	INFINEON Gallium Nitride (GaN) Transistor 650 V 13 A 0.17 ohm 1.8 nC TSON Surface Mount		Each (Supplied on Cut Tape) Re-Reel Packaging Options	100+ CHF 1.690 500+ CHF 1.410 1000+ CHF 1.270	Min: 100 / Mult: 1	650V	13A	0.17ohm	1.8nC	-	-	8Pins	-
	IGT65R140D2XTMA1	4640396RL Data Sheet RoHS Date/Lot Code	INFINEON Gallium Nitride (GaN) Transistor 650 V 13 A 0.17 ohm 1.8 nC HSOF Surface Mount		Each (Supplied on Cut Tape) Re-Reel Packaging Options	100+ CHF 1.810 500+ CHF 1.570 1000+ CHF 1.440	Min: 100 / Mult: 1	650V	13A	0.17ohm	1.8nC	-	-	8Pins	-
	IGT65R140D2ATMA1	4695749 Data Sheet RoHS Date/Lot Code	INFINEON Gallium Nitride (GaN) Transistor 650 V 13 A 0.17 ohm 1.8 nC HSOF Surface Mount		Each (Supplied on Cut Tape) Cut Tape	1+ CHF 3.410 10+ CHF 2.240 100+ CHF 1.640 500+ CHF 1.470 1000+ CHF 1.260	Min: 1 / Mult: 1	650V	13A	0.17ohm	1.8nC	HSOF	Surface Mount	8Pins	CoolGaN G5 Series
	IGLR65R140D2XUMA1	4573839 Data Sheet RoHS Date/Lot Code	INFINEON Gallium Nitride (GaN) Transistor 650 V 13 A 0.17 ohm 1.8 nC TSON Surface Mount		Each (Supplied on Cut Tape) Cut Tape	1+ CHF 3.310 10+ CHF 2.160 100+ CHF 1.690 500+ CHF 1.410 1000+ CHF 1.270	Min: 1 / Mult: 1	650V	13A	0.17ohm	1.8nC	TSON	Surface Mount	8Pins	CoolGaN G5 Series
	IGT65R140D2XTMA1	4640396 Data Sheet RoHS Date/Lot Code	INFINEON Gallium Nitride (GaN) Transistor 650 V 13 A 0.17 ohm 1.8 nC HSOF Surface Mount		Each (Supplied on Cut Tape) Cut Tape	1+ CHF 3.830 10+ CHF 2.510 100+ CHF 1.810 500+ CHF 1.570 1000+ CHF 1.440	Min: 1 / Mult: 1	650V	13A	0.17ohm	1.8nC	HSOF	Surface Mount	8Pins	CoolGaN G5 Series
	IGL65R140D2XUMA1	4732100 Data Sheet RoHS Date/Lot Code	INFINEON Gallium Nitride (GaN) Transistor 650 V 13 A 0.17 ohm 1.8 nC TSON Surface Mount		Each (Supplied on Cut Tape) Cut Tape	1+ CHF 3.820 10+ CHF 2.490 100+ CHF 1.790 500+ CHF 1.550 1000+ CHF 1.380	Min: 1 / Mult: 1	650V	13A	0.17ohm	1.8nC	TSON	Surface Mount	8Pins	CoolGaN G5 Series
	IGLR70R140D2SXUMA1	4694672 Data Sheet RoHS Date/Lot Code	INFINEON Gallium Nitride (GaN) Transistor 700 V 13 A 0.17 ohm 1.8 nC TSON Surface Mount		Each (Supplied on Cut Tape) Cut Tape	1+ CHF 2.600 10+ CHF 1.690 100+ CHF 1.240 500+ CHF 1.040 1000+ CHF 0.968	Min: 1 / Mult: 1	700V	13A	0.17ohm	1.8nC	TSON	Surface Mount	8Pins	CoolGaN G5 Series

Items per page:

1-7 of 7 items

of 1 page(s)

Popular Suppliers

ONSEMI

NEXPERIA

VISHAY

STMICROELECTRONICS

MULTICOMP PRO

INFINEON

NXP

ROHM

New Semiconductors - Discretes

TP65H035G4YS - gallium nitride (GaN) FET

TP65H035G4YS - gallium nitride (GaN) FET

RENESAS

G3R60MT07K – Silicon Carbide MOSFET

GENESIC SEMICONDUCTOR

G3R60MT07K – Silicon Carbide MOSFET

GENESIC SEMICONDUCTOR

TK024N60Z1,S1F(S - Power MOSFET

TK024N60Z1,S1F(S - Power MOSFET

TOSHIBA

ONSEMI

CoolSiC™ Trench MOSFET

CoolSiC™ Trench MOSFET

INFINEON

EconoDUAL™ 3 product family for medium power applications

EconoDUAL™ 3 product family for medium power applications

INFINEON

TK024N60Z1,S1F(S - Power MOSFET

TK024N60Z1,S1F(S - Power MOSFET

TOSHIBA

Nexperia E-Mode Power Gallium Nitride FET's (GaN FET's) for high & low voltage applications.

Nexperia E-Mode Power Gallium Nitride FET's (GaN FET's) for high & low voltage applications.

NEXPERIA

New onsemi 650v SiC MOSFETs

New onsemi 650v SiC MOSFETs

ONSEMI

semi-disc-np1-nov-analog-devices-matched-bjt-arrays

semi-disc-np1-nov-analog-devices-matched-bjt-arrays

ANALOG DEVICES

New Toshiba SiC Schottky Barrier Diodes

New Toshiba SiC Schottky Barrier Diodes

TOSHIBA

XPT series IGBT Thin-wafer Technology for snubber-less hard-switching applications

XPT series IGBT Thin-wafer Technology for snubber-less hard-switching applications

LITTELFUSE

MPS Series SiC Schottky Diodes - 650V to 1.7KV

GENESIC SEMICONDUCTOR

MPS Series SiC Schottky Diodes - 650V to 1.7KV

GENESIC SEMICONDUCTOR

N-Channel Power MOSFET

N-Channel Power MOSFET

INFINEON

600 V, 30 A Trench field-stop IGBT with full-rated Silicon Diode

600 V, 30 A Trench field-stop IGBT with full-rated Silicon Diode

NEXPERIA