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Menge | |
---|---|
1+ | CHF 1.480 |
10+ | CHF 1.090 |
25+ | CHF 0.997 |
100+ | CHF 0.888 |
250+ | CHF 0.840 |
500+ | CHF 0.808 |
Produktspezifikationen
Produktbeschreibung
The MAX4231AYT+T is a high output drive, rail to rail I/O, single CMOS operational amplifier (op-amp) with shutdown mode in 6 pin μDFN package. This amplifier exhibits high slew rate of 10V/μs and gain bandwidth product (GBWP) of 10MHz. The MAX4231 can drive typical headset levels (32ohm) as well as bias an RF power amplifier (PA) in wireless handset applications. This op-amp is designed to be part of RF PA control circuitry and biasing RF power amplifiers in wireless headsets. The MAX4231 offers active-low SHDN feature that drives the output low. This ensures that the RF PA is fully disabled when needed, preventing unconverted signals to RF antenna. It is also used in audio hands free car phones kits, digital to analogue converter buffers, transformer/line drivers and high bandwidth applications.
- Supply voltage range from ±1.35V to ±2.5V and 2.7V to 5.5V
- Operating temperature range from -40°C to 125°C
- Optimized for headsets and high current outputs
- Output drive capability of 200mA and full power bandwidth of 0.8MHz
- Large signal voltage gain of 100dB (RL = 100Kohm) at TA = +25°C
- PSRR of 85dB (VDD = 2.7V to 5.5V) and CMRR of 70dB (VSS <lt/> VCM <lt/> VDD) at TA = +25°C
- No phase reversal for overdriven inputs, unity gain stable for capacitive loads to 780pF
- Quiescent supply current (per amplifier) of 1.2mA at VDD = 5.5V, VCM = VDD/2
- Input offset voltage of 0.85mV and input offset current of 50pA at TA = +25°C
- Low power shutdown mode reduces supply current to less than 1μA
Anwendungen
Signalverarbeitung, Tragbare Geräte, Audio, Motorantrieb & -steuerung
Warnungen und Hinweise
Aufgrund des hohen Ausgangsstroms kann dieser Operationsverstärker die nominelle maximale Verlustleistung übertreffen.
Hinweise
ADI products are only authorized (and sold) for use by the customer and are not to be resold or otherwise passed on to any third party
Technische Spezifikationen
1Kanäle
10V/µs
µDFN
CMOS
850µV
Oberflächenmontage
125°C
-
No SVHC (21-Jan-2025)
-
1 Verstärker
10MHz
± 1.35V bis ± 2.5V, 2.7V bis 5.5V
6Pin(s)
Rail-to-Rail-Eingang/Ausgang (RRIO)
1pA
-40°C
-
MSL 1 - unbegrenzt
µDFN
10MHz
10V/µs
Technische Dokumente (2)
Gesetzgebung und Umweltschutz
Land, in dem der letzte Fertigungsprozeß ausgeführt wurde.Herkunftsland:Thailand
Land, in dem der letzte Fertigungsprozeß ausgeführt wurde.
RoHS
RoHS
Produkt-Konformitätszertifikat