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Menge | |
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1+ | CHF 6.220 |
10+ | CHF 5.670 |
25+ | CHF 5.000 |
50+ | CHF 4.970 |
100+ | CHF 4.940 |
250+ | CHF 4.870 |
500+ | CHF 4.860 |
Produktspezifikationen
Produktbeschreibung
AS7C4096A-12JIN is a 5.0V 4Mb (512K × 8) CMOS fast SRAM. It is a high-performance CMOS 4,194,304-bit static random access memory (SRAM) device organized as 524,288 words × 8bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. The chip enable input active-low CE permits easy memory expansion with multiple-bank memory systems. When active-low CE is high the device enters standby mode. The device is guaranteed not to exceed 55mW power consumption in CMOS standby mode. All chip inputs and outputs are TTL-compatible, and operation is from a single 5.0V supply voltage.
- Center power and ground pins
- Low power consumption: 880mW/max at 10ns (active), 55mW/max CMOS (standby)
- Equal access and cycle times
- Easy memory expansion with active-low CE, active-low OE inputs
- TTL-compatible, three-state I/O
- JEDEC standard packages
- ESD protection is ≥ 2000volts
- Latch-up current is ≥ 200mA
- 12ns access time, SOJ package
- Industrial temperature range from -40°C to 85°C
Technische Spezifikationen
Asynchron
512K x 8 Bit
36Pin(s)
5.5V
-
-40°C
-
No SVHC (27-Jun-2024)
4Mbit
SOJ
4.5V
5V
Oberflächenmontage
85°C
MSL 3 - 168 Stunden
Technische Dokumente (1)
Gesetzgebung und Umweltschutz
Land, in dem der letzte Fertigungsprozeß ausgeführt wurde.Herkunftsland:Taiwan
Land, in dem der letzte Fertigungsprozeß ausgeführt wurde.
RoHS
RoHS
Produkt-Konformitätszertifikat