IRF9Z24SPBF
MOSFET de puissance, Canal P, 60 V, 11 A, 0.28 ohm, TO-263 (D2PAK), Montage en surface
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| Quantité | Prix (hors TVA) |
|---|---|
| 1+ | CHF 1.390 |
| 10+ | CHF 0.864 |
| 100+ | CHF 0.847 |
| 500+ | CHF 0.837 |
| 1000+ | CHF 0.829 |
| 5000+ | CHF 0.798 |
Informations produit
Aperçu du produit
The IRF9Z24SPBF is a third generation P-channel enhancement-mode Power MOSFET comes with the best combination of fast-switching, ruggedized device design and low ON-resistance. The D2PAK is a surface-mount power package capable of accommodating die size up to HEX-4. It provides the highest power capability in any existing surface-mount package. The D2PAK is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2W in a typical surface-mount application.
- Advanced process technology
- -55 to 175°C Operating temperature range
- Fully avalanche rated
- Surface-mount
Avertissements
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Spécifications techniques
Canal P
11A
TO-263 (D2PAK)
10V
60W
175°C
-
Lead (21-Jan-2025)
60V
0.28ohm
Montage en surface
4V
3Broche(s)
-
MSL 1 - Illimité
Documents techniques (2)
Législation et Questions environnementales
Pays dans lequel la dernière étape de production majeure est intervenuePays d'origine :China
Pays dans lequel la dernière étape de production majeure est intervenue
RoHS
RoHS
Certificat de conformité du produit