IRF540NSTRRPBF
MOSFET de puissance, Canal N, 100 V, 33 A, 0.044 ohm, TO-263 (D2PAK), Montage en surface
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| Quantité | Prix (hors TVA) |
|---|---|
| 1+ | CHF 1.950 |
| 10+ | CHF 1.270 |
| 100+ | CHF 1.120 |
| 500+ | CHF 0.949 |
| 1000+ | CHF 0.930 |
Informations produit
Produits de remplacement pour IRF540NSTRRPBF
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Aperçu du produit
The IRF540NSTRRPBF is a HEXFET® single N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation for use in a wide variety of applications. The surface-mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible ON-resistance in any existing surface-mount package. It is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2W in a typical surface-mount application.
- Advanced process technology
- Ultra-low ON-resistance
- Dynamic dV/dt rating
- Fast switching
- Fully avalanche rating
Avertissements
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Spécifications techniques
Canal N
33A
TO-263 (D2PAK)
10V
130W
175°C
-
No SVHC (08-Jul-2021)
100V
0.044ohm
Montage en surface
4V
3Broche(s)
-
MSL 1 - Illimité
Documents techniques (2)
Législation et Questions environnementales
Pays dans lequel la dernière étape de production majeure est intervenuePays d'origine :China
Pays dans lequel la dernière étape de production majeure est intervenue
RoHS
RoHS
Certificat de conformité du produit