Reduced PricesOffersContact UsHelpTrack Ordersauf Deutschen français
Register
0
0 ItemsCHF0.00
ex VAT
ex VAT

Single MOSFETs:

10 Products Found
View
Buyer
Engineer
Manufacturer
Channel Type
Transistor Polarity
Drain Source Voltage Vds
Continuous Drain Current Id
Drain Source On State Resistance
On Resistance Rds(on)
Transistor Case Style
Transistor Mounting
Rds(on) Test Voltage
Gate Source Threshold Voltage Max
Power Dissipation
Power Dissipation Pd
No. of Pins
Operating Temperature Max
Product Range
Qualification
Automotive Qualification Standard
Packaging
Filter(s) Applied
1 Filter(s) Selected
ComparePrice ForQuantity
IPA95R1K2P7XKSA1
INFINEON IPA95R1K2P7XKSA1
2916154

Data Sheet

RoHS

Date/Lot Code

INFINEON
  1. Power MOSFET
  2. N Channel
  3. 950 V
  4. 6 A
  5. 1.03 ohm
  6. TO-220FP
  7. Through Hole
Each
1+
CHF 1.860
10+
CHF 0.902
100+
CHF 0.808
500+
CHF 0.657
1000+
CHF 0.545
More Pricing...
Min: 1 / Mult: 1
N Channel
-
950V
6A
1.03ohm
-
TO-220FP
Through Hole
10V
3V
27W
-
3Pins
150°C
CoolMOS P7
-
-
R8008ANJFRGTL
ROHM R8008ANJFRGTL
3406517

Data Sheet

RoHS

Date/Lot Code

ROHM
  1. Power MOSFET
  2. N Channel
  3. 800 V
  4. 8 A
  5. 1.03 ohm
  6. TO-263S
  7. Surface Mount
Each (Supplied on Cut Tape)
Cut Tape
1+
CHF 4.400
10+
CHF 3.630
100+
CHF 2.930
500+
CHF 2.600
1000+
CHF 2.230
Min: 1 / Mult: 1
N Channel
-
800V
8A
1.03ohm
-
TO-263S
Surface Mount
10V
5V
195W
-
3Pins
150°C
-
AEC-Q101
-
R8008ANJFRGTL
ROHM R8008ANJFRGTL
3406517RL

Data Sheet

RoHS

Date/Lot Code

ROHM
  1. Power MOSFET
  2. N Channel
  3. 800 V
  4. 8 A
  5. 1.03 ohm
  6. TO-263S
  7. Surface Mount
Each (Supplied on Cut Tape)
Re-Reel
Packaging Options
100+
CHF 2.930
500+
CHF 2.600
1000+
CHF 2.230
Min: 100 / Mult: 1
N Channel
N Channel
800V
8A
1.03ohm
0.79ohm
TO-263S
Surface Mount
10V
5V
195W
195W
3Pins
150°C
-
AEC-Q101
AEC-Q101
IPU95R1K2P7AKMA1
INFINEON IPU95R1K2P7AKMA1
2916135

Data Sheet

RoHS

INFINEON
  1. Power MOSFET
  2. N Channel
  3. 950 V
  4. 6 A
  5. 1.03 ohm
  6. TO-251
  7. Through Hole
Each
1+
CHF 1.320
10+
CHF 1.080
100+
CHF 0.845
500+
CHF 0.659
1000+
CHF 0.536
Min: 1 / Mult: 1
N Channel
-
950V
6A
1.03ohm
-
TO-251
Through Hole
10V
3V
52W
-
3Pins
150°C
CoolMOS P7
-
-
IPN95R1K2P7ATMA1
INFINEON IPN95R1K2P7ATMA1
2916132RL

Data Sheet

RoHS

Date/Lot Code

INFINEON
  1. Power MOSFET
  2. N Channel
  3. 950 V
  4. 6 A
  5. 1.03 ohm
  6. SOT-223
  7. Surface Mount
Each (Supplied on Cut Tape)
Re-Reel
Packaging Options
100+
CHF 0.644
500+
CHF 0.467
1000+
CHF 0.427
Min: 100 / Mult: 1
N Channel
-
950V
6A
1.03ohm
-
SOT-223
Surface Mount
10V
3V
7W
-
3Pins
150°C
CoolMOS P7
-
-
IPN95R1K2P7ATMA1
INFINEON IPN95R1K2P7ATMA1
2916132

Data Sheet

RoHS

Date/Lot Code

INFINEON
  1. Power MOSFET
  2. N Channel
  3. 950 V
  4. 6 A
  5. 1.03 ohm
  6. SOT-223
  7. Surface Mount
Each (Supplied on Cut Tape)
Cut Tape
1+
CHF 1.450
10+
CHF 0.968
100+
CHF 0.644
500+
CHF 0.467
1000+
CHF 0.427
Min: 1 / Mult: 1
N Channel
-
950V
6A
1.03ohm
-
SOT-223
Surface Mount
10V
3V
7W
-
3Pins
150°C
CoolMOS P7
-
-
IPD95R1K2P7ATMA1
INFINEON IPD95R1K2P7ATMA1
2916128

Data Sheet

RoHS

Date/Lot Code

INFINEON
  1. Power MOSFET
  2. N Channel
  3. 950 V
  4. 6 A
  5. 1.03 ohm
  6. TO-252 (DPAK)
  7. Surface Mount
Each (Supplied on Cut Tape)
Cut Tape
2500+
CHF 0.439
Min: 2500 / Mult: 2500
N Channel
-
950V
6A
1.03ohm
-
TO-252 (DPAK)
Surface Mount
10V
3V
52W
-
3Pins
150°C
CoolMOS P7
-
-
IPD95R1K2P7ATMA1
INFINEON IPD95R1K2P7ATMA1
2916128RL

Data Sheet

RoHS

Date/Lot Code

INFINEON
  1. Power MOSFET
  2. N Channel
  3. 950 V
  4. 6 A
  5. 1.03 ohm
  6. TO-252 (DPAK)
  7. Surface Mount
Each (Supplied on Cut Tape)
Re-Reel
Packaging Options
2500+
CHF 0.439
Min: 2500 / Mult: 2500
N Channel
-
950V
6A
1.03ohm
-
TO-252 (DPAK)
Surface Mount
10V
3V
52W
-
3Pins
150°C
CoolMOS P7
-
-
R8008ANJGTL
ROHM R8008ANJGTL
4202984RL

Data Sheet

RoHS

Date/Lot Code

ROHM
  1. Power MOSFET
  2. N Channel
  3. 800 V
  4. 8 A
  5. 1.03 ohm
  6. TO-263 (D2PAK)
  7. Surface Mount
Each (Supplied on Cut Tape)
Re-Reel
Packaging Options
1000+
CHF 2.230
Min: 1000 / Mult: 1000
N Channel
-
800V
8A
1.03ohm
-
TO-263 (D2PAK)
Surface Mount
10V
5V
195W
-
3Pins
150°C
-
-
-
R8008ANJGTL
ROHM R8008ANJGTL
4202984

Data Sheet

RoHS

Date/Lot Code

ROHM
  1. Power MOSFET
  2. N Channel
  3. 800 V
  4. 8 A
  5. 1.03 ohm
  6. TO-263 (D2PAK)
  7. Surface Mount
Each (Supplied on Cut Tape)
Cut Tape
1000+
CHF 2.230
Min: 1000 / Mult: 1000
N Channel
-
800V
8A
1.03ohm
-
TO-263 (D2PAK)
Surface Mount
10V
5V
195W
-
3Pins
150°C
-
-
-
1-10 of 10 items
of 1 page(s)

Popular Suppliers

ONSEMI
NEXPERIA
VISHAY
STMICROELECTRONICS
MULTICOMP PRO
INFINEON
NXP
ROHM

New Semiconductors - Discretes

TP65H035G4YS - gallium nitride (GaN) FET
RENESAS
TP65H035G4YS - gallium nitride (GaN) FET
RENESAS
G3R60MT07K – Silicon Carbide MOSFET
GENESIC SEMICONDUCTOR
G3R60MT07K – Silicon Carbide MOSFET
GENESIC SEMICONDUCTOR
TK024N60Z1,S1F(S - Power MOSFET
TOSHIBA
TK024N60Z1,S1F(S - Power MOSFET
TOSHIBA
M3S SiC Series
ONSEMI
M3S SiC Series
ONSEMI
CoolSiC™ Trench MOSFET
INFINEON
CoolSiC™ Trench MOSFET
INFINEON
EconoDUAL™ 3 product family for medium power applications
INFINEON
EconoDUAL™ 3 product family for medium power applications
INFINEON
TK024N60Z1,S1F(S - Power MOSFET
TOSHIBA
TK024N60Z1,S1F(S - Power MOSFET
TOSHIBA
Nexperia E-Mode Power Gallium Nitride FET's (GaN FET's) for high & low voltage applications.
NEXPERIA
Nexperia E-Mode Power Gallium Nitride FET's (GaN FET's) for high & low voltage applications.
NEXPERIA
New onsemi 650v SiC MOSFETs
ONSEMI
New onsemi 650v SiC MOSFETs
ONSEMI
semi-disc-np1-nov-analog-devices-matched-bjt-arrays
ANALOG DEVICES
semi-disc-np1-nov-analog-devices-matched-bjt-arrays
ANALOG DEVICES
New Toshiba SiC Schottky Barrier Diodes
TOSHIBA
New Toshiba SiC Schottky Barrier Diodes
TOSHIBA
XPT series IGBT Thin-wafer Technology for snubber-less hard-switching applications
LITTELFUSE
XPT series IGBT Thin-wafer Technology for snubber-less hard-switching applications
LITTELFUSE
MPS Series SiC Schottky Diodes - 650V to 1.7KV
GENESIC SEMICONDUCTOR
MPS Series SiC Schottky Diodes - 650V to 1.7KV
GENESIC SEMICONDUCTOR
N-Channel Power MOSFET
INFINEON
N-Channel Power MOSFET
INFINEON
600 V, 30 A Trench field-stop IGBT with full-rated Silicon Diode
NEXPERIA
600 V, 30 A Trench field-stop IGBT with full-rated Silicon Diode
NEXPERIA
Norton Secured
BSI 9001
Visa
Mastercard
AMEX
PayPal
Trade Account