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Menge | |
---|---|
1+ | CHF 52.860 |
10+ | CHF 45.930 |
25+ | CHF 43.050 |
100+ | CHF 39.370 |
Produktspezifikationen
Produktbeschreibung
HMC903LP3E is a self biased, gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic (pHEMT), low noise amplifier (LNA) with an option bias control for IDQ reduction. This device features an input and an output that are dc blocked and internally matched to 50 ohm, making it ideal for high capacity microwave radios and video satellite (VSAT) applications. It is used in application such as point to point radios, point to multipoint radios, military and space, test instrumentation etc.
- Low noise figure is 1.7dB typical at (6GHz to 16GHz)
- High gain is 18.5dB typical at (6GHz to 16GHz)
- Output power for 1dB compression (P1dB) is 14.5dBm typical at 6GHz to 16GHz
- Single-supply voltage is 3.5V typical at (80mA)
- Output third-order intercept (IP3) is 25dBm typical
- Self biased with optional bias control for IDQ reduction
- Supply current is 60mA typical at (6GHz to 16GHz)
- Operating temperature is -40°C to +85°C
- Package style is 16-lead LFCSP
Hinweise
ADI products are only authorized (and sold) for use by the customer and are not to be resold or otherwise passed on to any third party
Technische Spezifikationen
6GHz
18.5dB
LFCSP-EP
-
-40°C
-
MSL 1 - unbegrenzt
17GHz
2.2dB
16Pin(s)
3.5V
85°C
-
No SVHC (21-Jan-2025)
Technische Dokumente (1)
Gesetzgebung und Umweltschutz
Land, in dem der letzte Fertigungsprozeß ausgeführt wurde.Herkunftsland:Philippines
Land, in dem der letzte Fertigungsprozeß ausgeführt wurde.
RoHS
RoHS
Produkt-Konformitätszertifikat