IRFIBE30GPBF
MOSFET de puissance, Canal N, 800 V, 2.1 A, 3 ohm, TO-220FP, Traversant
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| Quantité | Prix (hors TVA) |
|---|---|
| 1+ | CHF 1.350 |
| 10+ | CHF 1.340 |
| 100+ | CHF 1.290 |
| 500+ | CHF 1.260 |
| 1000+ | CHF 1.250 |
| 5000+ | CHF 1.160 |
Informations produit
Aperçu du produit
The IRFIBE30GPBF is a 800V N-channel enhancement-mode Power MOSFET with single configuration. This third generation Power MOSFET from Vishay provides the designer with the best combination of fast switching, ruggedized device design, low ON-resistance. The FULLPAK eliminates the need for additional insulating hardware in applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heat sink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heat sink using a single clip or by a single screw fixing.
- Isolated package
- Low thermal resistance
- Sink to lead creepage
- High voltage isolation
- Dynamic dV/dt rating
Spécifications techniques
Canal N
2.1A
TO-220FP
10V
35W
150°C
-
Lead (21-Jan-2025)
800V
3ohm
Traversant
4V
3Broche(s)
-
-
Documents techniques (2)
Législation et Questions environnementales
Pays dans lequel la dernière étape de production majeure est intervenuePays d'origine :China
Pays dans lequel la dernière étape de production majeure est intervenue
RoHS
RoHS
Certificat de conformité du produit