NVB082N65S3F

NVB082N65S3F is a single N-channel, power MOSFET. This SUPERFET® III MOSFET is ON semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that utilizes charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rates. Consequently, SUPERFET III MOSFET is very suitable for various power systems for miniaturization and higher efficiency. SUPERFET III FRFET® MOSFET’s optimized reverse recovery performance of the body diode can remove additional components and improve system reliability. It is used in applications such as automotive onboard chargers, and automotive DC/DC converters for HEV.

• 100% avalanche tested, qualified with AEC-Q101
• Drain-to-source breakdown voltage is 700V minimum at (VGS = 0V, ID = 10mA, TJ = 150°C)
• Gate-to-body leakage current is ±100nA typical at (VGS = 0V, ID = 1mA, TJ = 25°C)
• Static drain-to-source on resistance is 64mohm typical at (VGS = 10V, ID = 20A)
• Input capacitance is 3410pF typical at (VDS = 400V, VGS = 0V, f = 1MHz)
• Turn-on delay time is 31ns typical at (VDD = 400V, ID = 20A, VGS = 10V, RG = 4.7 ohm)
• Rise time is 29ns typical at (VDD = 400V, ID = 20A, VGS = 10V, RG = 4.7 ohm)
• Output capacitance is 70pF typical at (VDS = 400V, VGS = 0V, f = 1MHz)
• Junction temperature range from -55°C to 150°C
• D2PAK package

Avertissements

La forte demande du marché pour ce produit, entraîné une augmentation des délais. Les dates de livraison peuvent varier. Produit exempt de remises.