IS62WV51216EBLL-45BLI
SRAM, SRAM asynchrone, 8 Mbit, 512K x 16 bits, Mini BGA, 48 Broche(s), 3.6 V
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| Quantité | Prix (hors TVA) |
|---|---|
| 1+ | CHF 5.620 |
| 10+ | CHF 5.130 |
| 25+ | CHF 5.030 |
| 50+ | CHF 5.000 |
| 100+ | CHF 4.480 |
| 250+ | CHF 4.460 |
| 500+ | CHF 4.040 |
Informations produit
Aperçu du produit
IS62WV51216EBLL-45BLI is a 512Kx16 low voltage, ultra-low power CMOS static RAM. It is a high-speed, 8Mbit static RAM organized as 512K words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices. When active-low CS1 is HIGH (deselected) or when CS2 is low (deselected) or when active-low CS1 is low, CS2 is high and both active-low LB and active-low UB and are HIGH, the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels.
- High-speed access time is 45ns
- CMOS low power operation, 36mW (typical) operating
- TTL compatible interface levels
- Single power supply is 2.2V-3.6V VDD
- Data control for upper and lower bytes
- Input capacitance is 10pF (TA = 25°C, f = 1MHz, VDD = VDD(typ))
- Mini BGA package
- Industrial temperature rating range from -40°C to +85°C
Spécifications techniques
SRAM asynchrone
512K x 16 bits
48Broche(s)
2.2V
-
-40°C
-
No SVHC (16-Jul-2019)
8Mbit
Mini BGA
3.6V
3.3V
Montage en surface
85°C
MSL 3 - 168 heures
Documents techniques (1)
Législation et Questions environnementales
Pays dans lequel la dernière étape de production majeure est intervenuePays d'origine :Taiwan
Pays dans lequel la dernière étape de production majeure est intervenue
RoHS
RoHS
Certificat de conformité du produit