IRFB4229PBF
MOSFET de puissance, Canal N, 250 V, 46 A, 0.046 ohm, TO-220AB, Traversant
Vous en voulez davantage ?
| Quantité | Prix (hors TVA) |
|---|---|
| 1+ | CHF 2.910 |
| 10+ | CHF 2.640 |
| 100+ | CHF 1.390 |
| 500+ | CHF 1.140 |
| 1000+ | CHF 1.130 |
Informations produit
Aperçu du produit
The IRFB4229PBF is a HEXFET® single N-channel Power MOSFET designed for sustain, energy recovery and pass switch applications in plasma display panels. It utilizes the latest processing techniques to achieve low ON-resistance per silicon area and low EPULSE rating. Additional features of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for PDP driving applications.
- Advanced process technology
- Low Qg for fast response
- High repetitive peak current capability for reliable operation
- Short fall and rise times for fast switching
- Repetitive avalanche capability for robustness and reliability
Avertissements
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Spécifications techniques
Canal N
46A
TO-220AB
10V
330W
175°C
-
No SVHC (21-Jan-2025)
250V
0.046ohm
Traversant
5V
3Broche(s)
-
-
Documents techniques (3)
Législation et Questions environnementales
Pays dans lequel la dernière étape de production majeure est intervenuePays d'origine :China
Pays dans lequel la dernière étape de production majeure est intervenue
RoHS
RoHS
Certificat de conformité du produit