IPD320N20N3GATMA1
MOSFET de puissance, Canal N, 200 V, 34 A, 0.032 ohm, TO-252 (DPAK), Montage en surface
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| Quantité | Prix (hors TVA) |
|---|---|
| 1+ | CHF 2.930 |
| 10+ | CHF 2.050 |
| 100+ | CHF 1.470 |
| 500+ | CHF 1.300 |
| 1000+ | CHF 1.270 |
Informations produit
Aperçu du produit
The IPD320N20N3 G is a 200V N-channel Power MOSFET ideally suited for high-frequency switching, achieving excellent performance in applications such as synchronous rectification for AC-DC SMPS and motor control. The OptiMOS™ MOSFET is optimized for hard commutation ruggedness, achieving low Qrr and lower peak reverse recovery charges. It is performance leading benchmark technologies, perfectly suited for synchronous rectification in 48V systems, DC-DC converters, uninterruptable power supplies (UPS) and inverters for DC motor drives.
- Highest efficiency
- Highest power density
- Lowest board space consumption
- Minimal device paralleling required
- System cost improvement
- Environmentally-friendly
- Easy to design in
Avertissements
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Spécifications techniques
Canal N
34A
TO-252 (DPAK)
10V
136W
175°C
-
No SVHC (21-Jan-2025)
200V
0.032ohm
Montage en surface
3V
3Broche(s)
-
MSL 1 - Illimité
Documents techniques (2)
Législation et Questions environnementales
Pays dans lequel la dernière étape de production majeure est intervenuePays d'origine :Malaysia
Pays dans lequel la dernière étape de production majeure est intervenue
RoHS
RoHS
Certificat de conformité du produit