FM24V01A-GTR

FM24V01A-GTR is a FM24V01A 128Kbit non-volatile memory employing an advanced ferroelectric process. An F-RAM is non-volatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system-level reliability problems caused by EEPROM and other non-volatile memories. Data is written to the memory array immediately after each byte is successfully transferred to the device. The next bus cycle can commence without the need for data polling. In addition, the product offers substantial write endurance compared with other non-volatile memories. It is ideal for non-volatile memory applications, requiring frequent or rapid writes. Examples range from data logging, where the number of write cycles may be critical, to demanding industrial controls where the long write time of EEPROM can cause data loss. The combination of features allows more frequent data writing with less overhead for the system.

• 128Kbit ferroelectric random access memory (F-RAM) logically organized as 16K × 8
• NoDelay™ writes, advanced high-reliability ferroelectric process
• Fast two-wire serial interface (I2C), up to 3.4MHz frequency, low power consumption
• Direct hardware replacement for serial EEPROM, supports legacy timings for 100KHz and 400KHz
• 175μA active current at 100KHz, 150μA standby current
• Low-voltage operation: VDD = 2.0V to 3.6V
• Industrial temperature range from –40°C to +85°C
• 8-pin SOIC package