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Quantité | Prix (hors TVA) |
---|---|
1+ | CHF 15.180 |
5+ | CHF 14.870 |
Informations produit
Aperçu du produit
The CY62167DV30LL-55ZXI is a 16Mb high-performance CMOS static RAM organized as 1M words by 16-bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power-down feature that significantly reduces power consumption by 99% when addresses are not toggling. The device can also be put into standby mode when deselected. The input/output pins are placed in a high-impedance state when deselected, outputs are disabled, both byte high enable and byte low enable are disabled or during a write operation. Writing to the device is accomplished by taking chip enables and write enable input LOW. If byte low enable is LOW, then data from I/O pins is written into the location specified on the address pins. If byte high enable is LOW, then data from I/O pins is written into the location specified on the address pins.
- Ultra-low standby power
- Easy memory expansion with CE1, CE2 and OE
- Automatic power-down when deselected
- CMOS for optimum speed/power
Spécifications techniques
SRAM asynchrone
1M x 16bits
48Broche(s)
3.6V
-
-40°C
-
No SVHC (17-Jan-2023)
16Mbit
TSOP
2.2V
3V
Montage en surface
85°C
MSL 3 - 168 heures
Documents techniques (1)
Produits de remplacement pour CY62167DV30LL-55ZXI..
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Législation et Questions environnementales
Pays dans lequel la dernière étape de production majeure est intervenuePays d'origine :United States
Pays dans lequel la dernière étape de production majeure est intervenue
RoHS
RoHS
Certificat de conformité du produit