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Quantité | Prix (hors TVA) |
---|---|
1+ | CHF 22.540 |
5+ | CHF 21.730 |
10+ | CHF 20.920 |
25+ | CHF 19.470 |
50+ | CHF 19.460 |
Informations produit
Aperçu du produit
CY14B101NA-ZS25XI is a fast static RAM (SRAM), with a non-volatile element in each memory cell. The memory is organized as 64K words of 16 bits each. The embedded non-volatile elements incorporate QuantumTrap technology, producing the world’s most reliable non-volatile memory. The SRAM provides infinite read and write cycles, while independent non-volatile data resides in the highly reliable QuantumTrap cell. Data transfers from the SRAM to the non-volatile elements (the STORE operation) takes place automatically at power-down. On power-up, data is restored to the SRAM (the RECALL operation) from the non-volatile memory.
- Hands off automatic STORE on power-down with only a small capacitor
- RECALL to SRAM initiated by software or power-up
- Infinite read, write, and RECALL cycles
- 1 million STORE cycles to QuantumTrap
- 20 year data retention, 25ns speed
- Power supply voltage range from 2.7 to 3.6V
- VCC standby current is 5mA at active-low CE > (VCC – 0.2V), VIN < 0.2V or > (VCC – 0.2V)
- Average VCC current is 70mA at tRC=25ns
- 44-pin TSOP II package
- Industrial ambient temperature range from -40°C to +85°C
Spécifications techniques
1Mbit
25ns
2.7V
TSOP-II
Parallèle
-40°C
-
No SVHC (21-Jan-2025)
64K x 16 bits
25ns
3.6V
44Broche(s)
Montage en surface
85°C
MSL 3 - 168 heures
Documents techniques (1)
Législation et Questions environnementales
Pays dans lequel la dernière étape de production majeure est intervenuePays d'origine :Philippines
Pays dans lequel la dernière étape de production majeure est intervenue
RoHS
RoHS
Certificat de conformité du produit