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Informations produit
Aperçu du produit
AS7C34098A-12TIN is a high-performance CMOS 4,194,304-bit static random access memory (SRAM) device organized as 262,144 words × 16bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. A read cycle is accomplished by asserting output enable (active-low OE) and chip enable (active-low CE), with write enable (active-low WE) high. The chip drives I/O pins with the data word referenced by the input address. When either chip enable or output enable is inactive, or write enable is active, output drivers stay in high-impedance mode. The device provides multiple centre power and ground pins, and separate byte enable controls, allowing individual bytes to be written and read. Active-low LB controls the lower bits, I/O1–I/O8, and active-low UB controls the higher bits, I/O9–I/O16.
- Pin compatible with AS7C34098
- Centre power and ground pins, high speed
- Low power consumption, 650mW/max at 10ns active, 28.8mW/max CMOS standby
- Individual byte read/write controls
- Easy memory expansion with active-low CE, active-low OE inputs
- TTL- and CMOS-compatible, three-state I/O
- ESD protection ≥ 2000volts
- Latch-up current ≥ 200mA
- 12ns access time, TSOP 2 package
- Industrial temperature range from -40°C to 85°C
Spécifications techniques
Asynchrône
256K x 16 bits
44Broche(s)
3.6V
-
-40°C
-
No SVHC (27-Jun-2024)
4Mbit
TSOP-II
3V
3.3V
Montage en surface
85°C
-
Documents techniques (1)
Législation et Questions environnementales
Pays dans lequel la dernière étape de production majeure est intervenuePays d'origine :China
Pays dans lequel la dernière étape de production majeure est intervenue
RoHS
RoHS
Certificat de conformité du produit