Low

IRS2109SPBF - 

MOSFET-IC, High-Side, 10V-20V Versorgungsspannung, 600mAout, 200ns Verzögerung, SOIC-8

INFINEON IRS2109SPBF

Abbildung ggf. ähnlich. Alle Angaben ohne Gewähr. Ausschlaggebend sind die Produktinformationen des Herstellers.

Herstellerteilenummer:
IRS2109SPBF
Bestellnummer:
1704505
Technisches Datenblatt:
(EN)
Technische Dokumentation anzeigen

Produktspezifikationen

:
8Pin(s)
:
High-Side
:
750ns
:
10V
:
600mA
:
SOIC
:
-40°C
:
20V
:
125°C
:
-
:
Stückweise
:
200ns
:
-
:
MSL 2 - 1 Jahr
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Produktbeschreibung

The IRS2109SPBF is a high voltage high speed power MOSFET and IGBT Half-bridge Driver with dependent high and low-side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output driver features a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high-side configuration which operates up to 600V.
  • Floating channel designed for bootstrap operation
  • Tolerant to negative transient voltage (dV/dt immune)
  • Under-voltage lockout for both channels
  • 3.3, 5 and 15V Input logic compatible
  • Cross-conduction prevention logic
  • Matched propagation delay for both channels
  • High-side output in phase with IN input
  • Logic and power ground ±5V offset
  • Internal 500ns dead-time and programmable up to 5µs with one external RDT resistor
  • Lower di/dt gate driver for better noise immunity
  • Shutdown input turns OFF both channels

Anwendungen

Power-Management, Industrie