Low

IRF6717MTR1PBF - 

MOSFET-Transistor, n-Kanal, 38 A, 25 V, 1.25 mohm, 10 V, 1.8 V

INFINEON IRF6717MTR1PBF

Abbildung ggf. ähnlich. Alle Angaben ohne Gewähr. Ausschlaggebend sind die Produktinformationen des Herstellers.

Herstellerteilenummer:
IRF6717MTR1PBF
Bestellnummer:
1704493RL
Technisches Datenblatt:
(EN)
Technische Dokumentation anzeigen

Produktspezifikationen

:
7Pin(s)
:
DirectFET MX
:
0.00125ohm
:
1.8V
:
96W
:
38A
:
150°C
:
25V
:
-
:
n-Kanal
:
10V
:
-
:
MSL 3 - 168 Stunden
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Produktbeschreibung

The IRF6717MTR1PBF is a HEXFET® single N-channel Power MOSFET ideal for CPU core DC-to-DC converters. It combines the latest HEXFET® power MOSFET silicon technology with the advanced DirectFET™ packaging to achieve the lowest ON-state resistance in a package. It is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapour phase, infrared or convection soldering techniques. The DirectFET™ package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6717MPbF balances both low resistance and low charge along with ultra-low package inductance to reduce both conduction and switching losses. It has been optimized for parameters that are critical in synchronous buck including RDS (ON), gate charge and CdV/dt-induced turn on immunity. It offers particularly low RDS (ON) and high CdV/dt immunity for synchronous FET applications.
  • Dual-sided cooling compatible
  • Low conduction and switching losses
  • Optimized for high frequency switching and synchronize FET socket of synchronize buck converter
  • 100% Rg tested
  • Halogen-free

Anwendungen

Power-Management

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